A Low Phase Noise VCO in eWLB Package

Florian Starzer; Alexander Fischer; Herbert Knapp; M. Wojnowski; Linus Maurer; Andreas Stelzer

A Low Phase Noise VCO in eWLB Package

Florian Starzer
, Alexander Fischer
, Herbert Knapp
, M. Wojnowski
, Linus Maurer
, Andreas Stelzer

Abteilung für Hochfrequenzsysteme

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

Abstract

A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18 GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.

Originalsprache	Englisch
Titel	Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
Seitenumfang	4
Publikationsstatus	Veröffentlicht - Dez. 2012

Wissenschaftszweige

202019 Hochfrequenztechnik
202037 Signalverarbeitung
202023 Integrierte Schaltkreise
202029 Mikrowellentechnik
202033 Radartechnik

JKU-Schwerpunkte

Mechatronics and Information Processing

Andere Dateien und Links

14th Electronics Packaging Technology Conference

Dieses zitieren

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abstract = "A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21\% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18 GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7\%.",

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AU - Starzer, Florian

AU - Fischer, Alexander

AU - Knapp, Herbert

AU - Wojnowski, M.

AU - Maurer, Linus

AU - Stelzer, Andreas

PY - 2012/12

Y1 - 2012/12

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AB - A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18 GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.

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