A 120-GHz FMCW Radar Frontend Demonstrator Based on a SiGe Chipset

Martin Jahn; Abouzar Hamidipour; Ziqiang Tong; Andreas Stelzer

A 120-GHz FMCW Radar Frontend Demonstrator Based on a SiGe Chipset

Martin Jahn
, Abouzar Hamidipour
, Ziqiang Tong
, Andreas Stelzer

Abteilung für Hochfrequenzsysteme

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

Abstract

This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz. It was built with Silicon-Germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114GHz and 130GHz and a corresponding dual transceiver (TRX) chip with monostatic and quasi-monostatic TRX cells. The single-stage cascode amplifiers employed in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar front end with off-chip differential microstrip-antennas was built on RF substrate. FMCW radar measurements with frequency chirps from 119GHz to 122GHz verified the functionality of the designed radar sensor.

Originalsprache	Englisch
Titel	Proc. of the 41st European Microwave Week (EuMC 2011)
Seiten	519-522
Seitenumfang	4
Publikationsstatus	Veröffentlicht - Okt. 2011

Wissenschaftszweige

202019 Hochfrequenztechnik
202033 Radartechnik

JKU-Schwerpunkte

Mechatronics and Information Processing

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abstract = "This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz. It was built with Silicon-Germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114GHz and 130GHz and a corresponding dual transceiver (TRX) chip with monostatic and quasi-monostatic TRX cells. The single-stage cascode amplifiers employed in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar front end with off-chip differential microstrip-antennas was built on RF substrate. FMCW radar measurements with frequency chirps from 119GHz to 122GHz verified the functionality of the designed radar sensor.",

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N2 - This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz. It was built with Silicon-Germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114GHz and 130GHz and a corresponding dual transceiver (TRX) chip with monostatic and quasi-monostatic TRX cells. The single-stage cascode amplifiers employed in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar front end with off-chip differential microstrip-antennas was built on RF substrate. FMCW radar measurements with frequency chirps from 119GHz to 122GHz verified the functionality of the designed radar sensor.

AB - This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz. It was built with Silicon-Germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114GHz and 130GHz and a corresponding dual transceiver (TRX) chip with monostatic and quasi-monostatic TRX cells. The single-stage cascode amplifiers employed in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar front end with off-chip differential microstrip-antennas was built on RF substrate. FMCW radar measurements with frequency chirps from 119GHz to 122GHz verified the functionality of the designed radar sensor.

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