Aktivität: Vortrag oder Präsentation › Eingeladener Vortrag › Science-to-science
Beschreibung
Prototypical color centers in semiconductors, such as the NV-center in diamond or vacancy-related defects in silicon carbide, were identified as promissing candidates for the implementation of quantum applications in semiconductors. Their coupled electron spins feature correlated high/low-spin states that enable spin-selective manipulation e.g. via photo excitation, magnetic fields or mechanics. Advanced quantum embedding of a color center via a hamiltonian with an effective screened Coulomb interaction and a solver based on configuration interaction [1] has provided access to a quantitative understanding of the involved physics and opens access to theory-based qubit engineering. Our insight into the spin-selective optical cycle and photon ionization of the silicon vacancy in silicon carbide [2] demonstrates this.
[1] M. Bockstedte et. al., npj Quantum Materials 3, 31 (2018). [2] T. Seidl et al., Nat. Commun. 16, 4669 (2025).