A SiGe-based high-gain power amplifier for E-band communication system

Beschreibung

This paper presents the design of a high-gain power amplifier applicable, for example, in gigabyte point-to-point wireless services in the E-band (81-86 GHz). A three-stage amplifier was designed using differential cascode configurations. The proposed design was fabricated in a SiGe:C technology featuring 200-GHz fT heterojunction bipolar transistors. Measurement results show a saturated output power of 16.6 dBm and an output referred 1-dB compression point of 14.6 dBm. The design achieves a power added efficiency, a figure of merit, and a small signal gain of 11.8%, 48 dB, and 32 dB respectively. The amplifier is driven by a 3.3-V power supply and consumes 114 mA.

Zeitraum	07 Okt. 2013
Ereignistitel	Microwave Integrated Circuits Conference (EuMIC), 2013 European
Veranstaltungstyp	Konferenz
Ort	DeutschlandAuf Karte anzeigen